Influence/Effect of Deep-Level Defect of Absorber Layer and n/i Interface on the Performance of Antimony Triselenide Solar Cells by Numerical Simulation

The antimony sulphide (AnS) solar cell is a relatively new photovoltaic technology. Because of its attractive material, optical, and electrical qualities, Sb2Se3 an excellent absorption layer in cells, with conversion efficiency less than 8%. purpose this research to determine the best parameter for increasing efficiency. This focused on influence absorber defect density n/i interface performance trisulfide cells. researchers designed thickness values help SCAPS-1D (Solar Cell Capacitance Simulator-1D) simulation programme. For purpose, they ZnS/Sb2Se3/PEDOT: PSS planar p-i-n structure, then simulated performance. result confirms Power Conversion Efficiency (PCE) ≥25% at >300 nm 1014 cm−3, which were within acceptable range. In experiment, hypothesised that triselenide conduction band possessed typical energy ≈0.1 eV energetic level ≈0.6 eV. At interface, every condition generated similar result. However, noted few limitations regarding relationship between mechanism device